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Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors 원문보기

ACS applied materials & interfaces, v.8 no.3, 2016년, pp.2061 - 2070  

Jeong, Yesul (School of Engineering and Computing Sciences and Centre for Molecular and Nanoscale Electronics, Durham University, South Road, Durham DH1 3LE,) ,  Pearson, Christopher (School of Engineering and Computing Sciences and Centre for Molecular and Nanoscale Electronics, Durham University, South Road, Durham DH1 3LE,) ,  Kim, Hyun-Gwan (Research Center for Nano-Materials, DNF Company Ltd., Daejeon 306-802,) ,  Park, Man-Young (Research Center for Nano-Materials, DNF Company Ltd., Daejeon 306-802,) ,  Kim, Hongdoo (Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 446-701,) ,  Do, Lee-Mi (IT Convergence Technology Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700,) ,  Petty, Michael C. (School of Engineering and Computing Sciences and Centre for Molecular and Nanoscale Electronics, Durham University, South Road, Durham DH1 3LE,)

Abstract AI-Helper 아이콘AI-Helper

We report on the optimization of the plasma treatment conditions for a solution -processed silicon dioxide gate insulator for application in zinc oxide thin film transistors (TFTs). The SiO2 layer was formed by spin coating a perhydropolysilazane (PHPS) precursor. This thin film was subsequently the...

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