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NTIS 바로가기ACS applied materials & interfaces, v.8 no.3, 2016년, pp.2061 - 2070
Jeong, Yesul (School of Engineering and Computing Sciences and Centre for Molecular and Nanoscale Electronics, Durham University, South Road, Durham DH1 3LE,) , Pearson, Christopher (School of Engineering and Computing Sciences and Centre for Molecular and Nanoscale Electronics, Durham University, South Road, Durham DH1 3LE,) , Kim, Hyun-Gwan (Research Center for Nano-Materials, DNF Company Ltd., Daejeon 306-802,) , Park, Man-Young (Research Center for Nano-Materials, DNF Company Ltd., Daejeon 306-802,) , Kim, Hongdoo (Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 446-701,) , Do, Lee-Mi (IT Convergence Technology Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700,) , Petty, Michael C. (School of Engineering and Computing Sciences and Centre for Molecular and Nanoscale Electronics, Durham University, South Road, Durham DH1 3LE,)
We report on the optimization of the plasma treatment conditions for a solution -processed silicon dioxide gate insulator for application in zinc oxide thin film transistors (TFTs). The SiO2 layer was formed by spin coating a perhydropolysilazane (PHPS) precursor. This thin film was subsequently the...
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