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Japanese journal of applied physics, v.55 no.4, 2016년, pp.044103 -
Sato-Iwanaga, Junko , Yu, Zhiping , Dutton, Robert W. , Tsuchiya, Hideaki
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AbstractThe nonlinear characteristics arising from the third-order intermodulation distortion (IMD3) of MOSFETs are investigated by harmonic-balance device simulation. First, to identify the spatial location in a MOSFET, where IMD3 is mostly generated, a conventional n-MOSFET structure is simulated,...
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