다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기
Japanese journal of applied physics, v.53 no.4 suppl., 2014년, pp.04EP17 -
Takasugi, Tomoya , Matsumoto, Satoshi
AI-Helper
We report a hot carrier effect of the thin-film silicon-on-insulator (SOI) power metal oxide semiconductor field-effect transistor (MOSFET) for scaling under a constant drain electric field. The device degradation caused by the hot carrier effect was enhanced by shrinking a channel length even at th...
Colinge 10.1007/978-1-4419-9106-5 4 2004 3rd ed.
Colinge 1
IEEE Trans. Electron Devices Ohno 10.1109/16.239751 40 2074 1993
Mater. Sci. Eng. B Buttay 10.1016/j.mseb.2010.10.003 176 283 2011
Tomita 10.1109/ISPSD.2011.5890782 28
Mehdi
Payne
Kolawa
Marlino
Kassakian 10.1109/ISPSD.2001.934550 15
IEEE Trans. Electron. Packag. Manuf. Johnson 10.1109/TEPM.2004.843109 27 164 2004
Carlin 119
Funaki 10.1109/IEDM.1995.499377 95
IEEE Trans. Electron Devices Matsumoto 10.1109/16.925259 48 1270 2001
Marchant 31
IEEE Trans. Electron Devices Rahat 10.1109/16.239747 40 2047 1993
IEEE Trans. Electron Devices Matsumoto 10.1109/16.658818 45 105 1998
IEEE Trans. Electron Devices Lee 10.1109/LED.2002.805009 23 673 2002
Dietz 10.1109/ISPSD.2005.1487961 103
Cortes 10.1109/SCED.2005.1504316 91
Chen 163
Cheng 881
Guido 3167
van Dalen 10.1109/ISPSD.2011.5890862 163
Jpn. J. Appl. Phys. Matsumoto 10.1143/JJAP.47.8739 47 8739 2008
Jpn. J. Appl. Phys. Uchida 10.7567/JJAP.52.04CP08 52 2013
Tsuchiya Vol. 23 No. 2
IEEE Trans. Electron Devices Matsumoto 10.1109/16.491251 43 746 1996
IEEE Trans. Electron Devices Amat 10.1109/TDMR.2009.2025178 9 454 2009
Huang 10.1109/IRPS.2013.6532038 5D.3.1
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
Copyright KISTI. All Rights Reserved.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.