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IEEE electron device letters : a publication of the IEEE Electron Devices Society, v.38 no.3, 2017년, pp.345 - 348
Goto, Tetsuya (New Industry Creation Hatchery Center, Tohoku University, Sendai, Japan) , Imaizumi, Fuminobu (New Industry Creation Hatchery Center, Tohoku University, Sendai, Japan) , Sugawa, Shigetoshi
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Using ion implantation, we doped amorphous InGaZnO (a-IGZO) with Si and investigated how this doping influenced device performance. The Si doping increased the electrical conductivity of the a-IGZO films, showing that the Si doping had produced the electron carriers. The optimum oxygen partial press...
Higashiwaki, Masataka, Sasaki, Kohei, Kamimura, Takafumi, Hoi Wong, Man, Krishnamurthy, Daivasigamani, Kuramata, Akito, Masui, Takekazu, Yamakoshi, Shigenobu. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics. Applied physics letters, vol.103, no.12, 123511-.
Chabak, Kelson D., Moser, Neil, Green, Andrew J., Walker Jr., Dennis E., Tetlak, Stephen E., Heller, Eric, Crespo, Antonio, Fitch, Robert, McCandless, Jonathan P., Leedy, Kevin, Baldini, Michele, Wagner, Gunter, Galazka, Zbigniew, Li, Xiuling, Jessen, Gregg. Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage. Applied physics letters, vol.109, no.21, 213501-.
Narushima, S, Hosono, H, Jisun, J, Yoko, T, Shimakawa, K. Electronic transport and optical properties of proton-implanted amorphous 2CdO·GeO2 films. Journal of non-crystalline solids, vol.274, no.1, 313-318.
Narushima, Satoru, Orita, Masahiro, Hirano, Masahiro, Hosono, Hideo. Electronic structure and transport properties in the transparent amorphous oxide semiconductor2CdO⋅GeO2. Physical review. B, Condensed matter and materials physics, vol.66, no.3, 035203-.
Goto, Tetsuya, Ishii, Hidekazu, Sugawa, Shigetoshi, Ohmi, Tadahiro. Low-cost Xe sputtering of amorphous In-Ga-Zn-O thin-film transistors by rotation magnet sputtering incorporating a Xe recycle-and-supply system. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, vol.32, no.2, 02B105-.
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Nomura, Kenji, Takagi, Akihiro, Kamiya, Toshio, Ohta, Hiromichi, Hirano, Masahiro, Hosono, Hideo. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors. Japanese journal of applied physics. Part 1, Regular papers, short notes and review papers, vol.45, no.b5, 4303-.
Yabuta, Hisato, Sano, Masafumi, Abe, Katsumi, Aiba, Toshiaki, Den, Tohru, Kumomi, Hideya, Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering. Applied physics letters, vol.89, no.11, 112123-.
Moon, Yeon-Keon, Lee, Sih, Kim, Do-Hyun, Lee, Dong-Hoon, Jeong, Chang-Oh, Park, Jong-Wan. Application of DC Magnetron Sputtering to Deposition of InGaZnO Films for Thin Film Transistor Devices. Japanese journal of applied physics, vol.48, no.r3, 031301-.
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Man Hoi Wong, Sasaki, Kohei, Kuramata, Akito, Yamakoshi, Shigenobu, Higashiwaki, Masataka. Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.37, no.2, 212-215.
Kamiya, Toshio, Nomura, Kenji, Hosono, Hideo. Present status of amorphous In–Ga–Zn–O thin-film transistors. Science and technology of advanced materials, vol.11, no.4, 044305-.
Higashiwaki, Masataka, Sasaki, Kohei, Kuramata, Akito, Masui, Takekazu, Yamakoshi, Shigenobu. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates. Applied physics letters, vol.100, no.1, 013504-.
Nomura, Kenji, Ohta, Hiromichi, Takagi, Akihiro, Kamiya, Toshio, Hirano, Masahiro, Hosono, Hideo. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature, vol.432, no.7016, 488-492.
Goto, Tetsuya, Sugawa, Shigetoshi, Ohmi, Tadahiro. Impact of the Use of Xe on Electrical Properties in Magnetron-Sputtering Deposited Amorphous InGaZnO Thin-Film Transistors. Japanese journal of applied physics, vol.52, no.r5, 050203-.
Ide, Keisuke, Kikuchi, Yutomo, Nomura, Kenji, Kimura, Mutsumi, Kamiya, Toshio, Hosono, Hideo. Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors. Applied physics letters, vol.99, no.9, 093507-.
Lee, Yong-Su, Yu, Eric Kai-Hsiang, Shim, Dong-Hwan, Kong, Hyang-Shik, Bie, Linsen, Kanicki, Jerzy. Oxygen flow effects on electrical properties, stability, and density of states of amorphous In-Ga-Zn-O thin-film transistors. Japanese journal of applied physics, vol.53, no.12, 121101-.
Kamiya, Toshio, Nomura, Kenji, Hirano, Masahiro, Hosono, Hideo. Electronic structure of oxygen deficient amorphous oxide semiconductor a-InGaZnO4–x : Optical analyses and first-principle calculations. Physica status solidi. PSS. C, Current topics in solid state physics, vol.5, no.9, 3098-3100.
Um, Jae Gwang, Mativenga, Mallory, Jang, Jin. Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress. Applied physics letters, vol.103, no.3, 033501-.
Aikawa, Shinya, Nabatame, Toshihide, Tsukagoshi, Kazuhito. Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications. Applied physics letters, vol.103, no.17, 172105-.
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