Mastrapasqua, M.
(AT&)
,
Bude, J.
(T Bell Labs., Murray Hill, NJ, USA)
,
Pinto, M.
(AT&)
,
Manchanda, L.
(T Bell Labs., Murray Hill, NJ, USA)
,
Lee, K.F.
(AT&)
The impact ionization (II) current of p-channel MOSFETs designed for 0.1 μm operation has been investigated as a function of temperature and channel length, Lch down to 0.1 μm. It has been experimentally observed that at any channel length, the substrate current to source current ratio, IR, de...
The impact ionization (II) current of p-channel MOSFETs designed for 0.1 μm operation has been investigated as a function of temperature and channel length, Lch down to 0.1 μm. It has been experimentally observed that at any channel length, the substrate current to source current ratio, IR, decreases with decreasing lattice temperature. The temperature behavior of the II multiplication measured here is opposite to that in bulk. Such a temperature dependence of IR, has been already observed for n-MOSFETs but, to our knowledge, has never been reported in p-MOSFETs. Also, the minimum drain bias for which II is observed is VDS=1.3 V for the 0.1 μm p-MOSFET devices, which is substantially higher than that observed in deep sub-micron n-MOSFETs. Furthermore, IR is found to increase with decreasing Lch. Insight into the physical mechanisms behind these phenomena is given through full band Monte Carlo simulations.
The impact ionization (II) current of p-channel MOSFETs designed for 0.1 μm operation has been investigated as a function of temperature and channel length, Lch down to 0.1 μm. It has been experimentally observed that at any channel length, the substrate current to source current ratio, IR, decreases with decreasing lattice temperature. The temperature behavior of the II multiplication measured here is opposite to that in bulk. Such a temperature dependence of IR, has been already observed for n-MOSFETs but, to our knowledge, has never been reported in p-MOSFETs. Also, the minimum drain bias for which II is observed is VDS=1.3 V for the 0.1 μm p-MOSFET devices, which is substantially higher than that observed in deep sub-micron n-MOSFETs. Furthermore, IR is found to increase with decreasing Lch. Insight into the physical mechanisms behind these phenomena is given through full band Monte Carlo simulations.
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