POLISHING COMPOSITION FOR SILICON WAFER, POLISHING COMPOSITION KIT FOR SILICON WAFER AND METHOD OF POLISHING SILICON WAFER
원문보기
IPC분류정보
국가/구분
United States(US) Patent
공개
국제특허분류(IPC7판)
H01L-021/302
H01L-021/02
C09K-013/02
C09K-013/00
출원번호
US-0282969
(2006-10-18)
공개번호
US-0317974
(2009-12-24)
우선권정보
JP-2006-071503(2006-03-15)
국제출원번호
PCT/JP06/320750
(2006-10-18)
발명자
/ 주소
Iwata, Naoyuki
Nagashima, Isao
출원인 / 주소
DuPont AirProducts NanoMaterials Limited Liability Company
대리인 / 주소
Workman Nydegger
인용정보
피인용 횟수 :
0인용 특허 :
0
초록▼
The present invention provides a polishing composition which can remove a natural oxidized layer on a silicon wafer and can efficiently polish the silicon wafer. The polishing composition of the present invention comprises colloidal ceria and an alkaline polishing composition. The polishing composi
The present invention provides a polishing composition which can remove a natural oxidized layer on a silicon wafer and can efficiently polish the silicon wafer. The polishing composition of the present invention comprises colloidal ceria and an alkaline polishing composition. The polishing composition of the present invention may further comprise a chelating agent. The present invention includes a polishing method comprising removing an oxidized layer with colloidal ceria; a polishing method comprising removing an oxidized layer with colloidal ceria and polishing a silicon wafer with an alkaline polishing composition; and a polishing method comprising polishing a silicon wafer with a polishing composition comprising colloidal ceria and an alkaline polishing composition. Further, the present invention relates to a polishing composition kit comprising colloidal ceria and an alkaline polishing composition.
대표청구항▼
1. A polishing composition for a silicon wafer comprising: colloidal ceria comprising cerium oxide and water; and an alkaline polishing composition comprising an alkaline substance and water. 2. The polishing composition for a silicon wafer according to claim 1, further comprising: a chelating ag
1. A polishing composition for a silicon wafer comprising: colloidal ceria comprising cerium oxide and water; and an alkaline polishing composition comprising an alkaline substance and water. 2. The polishing composition for a silicon wafer according to claim 1, further comprising: a chelating agent. 3. The polishing composition for a silicon wafer according to claim 1, wherein the alkaline substance is selected from N-(2-aminoethyl)ethanolamine, piperazine, 2-aminoethanol, ethylenediamine, sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide, sodium carbonate or potassium carbonate. 4. The polishing composition for a silicon wafer according to claim 2, wherein the chelating agent is selected from ethylenediamine tetraacetic acid, diethylenetriamine pentaacetic acid, nitrilotriacetic acid, N-hydroxyethylethylenediamine triacetic acid or hydroxyethyliminodiacetic acid. 5. The polishing composition for a silicon wafer according to claim 1, wherein the polishing composition is diluted before polishing the silicon wafer. 6. The polishing composition for a silicon wafer according to claim 1, wherein the polishing composition has a pH of 10.5 to 12.5. 7. The polishing composition for a silicon wafer according to claim 1, wherein a concentration of the cerium oxide is 0.0025 to 1 parts by weight to 1000 parts by weight of the compound in a use point of using the polishing composition. 8. A polishing method of removing an oxidized layer on a silicon wafer surface comprising: polishing the silicon wafer surface with colloidal ceria comprising cerium oxide and water. 9. A method of polishing a silicon wafer comprising: removing an oxidized layer on a silicon wafer surface by polishing the silicon wafer surface with colloidal ceria comprising cerium oxide and water; and polishing the silicon wafer with an alkaline polishing composition comprising an alkaline substance and water. 10. A method of polishing a silicon wafer comprising: polishing the silicon wafer with a silicon-wafer polishing composition comprising colloidal ceria comprising cerium oxide and water, and an alkaline polishing composition comprising an alkaline substance and water. 11. The method of polishing a silicon wafer according to claim 8, wherein the colloidal ceria and/or the alkaline polishing composition further comprises a chelating agent. 12. A polishing composition kit for a silicon wafer comprising: colloidal ceria comprising cerium oxide and water; and an alkaline polishing composition comprising an alkaline substance and water. 13. A polishing composition kit for a silicon wafer according to claim 12, wherein the colloidal ceria and/or the alkaline polishing composition further comprises a chelating agent. 14. A polishing composition kit for a silicon wafer according to claim 12, wherein the alkaline substance is selected from N-(2-aminoethyl)ethanolamine, piperazine, 2-aminoethanol, ethylenediamine, sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide, sodium carbonate or potassium carbonate. 15. A polishing composition kit for polishing a silicon wafer according to claim 13, wherein the chelating agent is selected from ethylenediamine tetraacetic acid, diethylenetriamine pentaacetic acid, nitrilotriacetic acid, N-hydroxyethylethylenediamine triacetic acid or hydroxyethyliminodiacetic acid. 16. A polishing composition kit for polishing a silicon wafer according to claim 12, wherein a concentration of the cerium oxide contained in the colloidal ceria is 0.01 to 20% by weight. 17. A compound kit for polishing a silicon wafer according to claim 16, wherein the polishing composition is diluted before polishing the silicon wafer. 18. The polishing composition for a silicon wafer according to claim 2, wherein the alkaline substance is selected from N-(2-aminoethyl)ethanolamine, piperazine, 2-aminoethanol, ethylenediamine, sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide, sodium carbonate or potassium carbonate. 19. The method of polishing a silicon wafer according to claim 9, wherein the colloidal ceria and/or the alkaline polishing composition further comprises a chelating agent. 20. The method of polishing a silicon wafer according to claim 10, wherein the colloidal ceria and/or the alkaline polishing composition further comprises a chelating agent. 21. A polishing composition kit for polishing a silicon wafer according to claim 13, wherein a concentration of the cerium oxide contained in the colloidal ceria is 0.01 to 20% by weight. 22. A polishing composition kit for polishing a silicon wafer according to claim 14, wherein a concentration of the cerium oxide contained in the colloidal ceria is 0.01 to 20% by weight. 23. A polishing composition kit for polishing a silicon wafer according to claim 15, wherein a concentration of the cerium oxide contained in the colloidal ceria is 0.01 to 20% by weight.
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