이 특허에 인용된 특허 (20)

1. Mett Richard Raymond ; Dahimene Mahmoud ; Luscher Paul E. ; Salimian Siamak ; Contreras Mark Steven, Apparatus and method for actively controlling the DC potential of a cathode pedestal.

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2. Os Ron van ; Ross Eric D., Electrostatic chuck assembly.

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3. Kumar Ananda H. ; Shamouilian Shamouil, Electrostatic chuck capable of rapidly dechucking a substrate.

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4. Horwitz Christopher M. (New South Wales AUX), Electrostatic chuck with improved release.

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5. Hattori Kei (Yokohama JPX) Sekine Makoto (Yokohama JPX), Electrostatic chucking method.

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6. Shufflebotham Paul Kevin ; Barnes Michael S., Electrostatic clamping method and apparatus for dielectric workpieces in vacuum processors.

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7. Barnes Michael S. (San Francisco CA) Keller John H. (Newburgh NY) Logan Joseph S. (Jamestown RI) Tompkins Robert E. (Pleasant Valley NY) Westerfield ; Jr. Robert P. (Montgomery NY), Guard ring electrostatic chuck.

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8. Lambson Albert M. ; Caple Rick ; Lenz Eric H. ; Braun Laura M. ; Marsh Ricky, Method and an apparatus for offsetting plasma bias voltage in bi-polar electro-static chucks.

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9. Burkhart Vincent E., Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck.

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10. Graven Andrew J. ; Schmidt Melvin ; McCuen Kenneth A. ; Ra Yunju, Method and apparatus for clamping a substrate.

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11. Loo David H., Method and apparatus for optimizing a dechucking period used to dechuck a workpiece from an electrostatic chuck.

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12. Robbins Roger A. (Allen TX), Method and apparatus for releasing a semiconductor wafer from an electrostatic clamp.

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13. Su Yuh-Jia (Cupertino CA) Muh Richard (Fremont CA), Method of cleaning of an electrostatic chuck in plasma reactors.

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14. Shiota Iku,JPX ; Tsuboi Kyo,JPX, Method of detaching object to be processed from electrostatic chuck.

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15. Sato Junichi (Tokyo JPX), Method of removing residual charges of an electrostatic chuck used in a layer deposition process.

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16. Mashiro Supika (Saitama-Prefecture JPX) Sakamoto Kiyotaka (Tokyo JPX), Method of removing substrate and apparatus for controlling applied voltage.

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17. Kubly Marc B. ; Benjamin Neil Martin Paul ; Germain Steven Douglas, Methods and apparatuses for clamping and declamping a semiconductor wafer in a wafer processing system.

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18. Saeki Hiroaki (Yamanashi-ken JPX) Kondo Masaki (Kofu JPX), Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus.

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19. Benjamin Neil ; Jafarian-Tehrani Seyed Jafar ; Artusy Max, Voltage controller for electrostatic chuck of vacuum plasma processors.

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20. Blake Julian G. (211 Hart St. Beverly Farms MA 01915) Tu Weilin (6 Oak St. Natick MA 01760), Wafer release method and apparatus.

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이 특허를 인용한 특허 (48)

1. Brillhart, Paul Lukas; Fovell, Richard; Tavassoli, Hamid; Buchberger, Jr., Douglas A.; Burns, Douglas H.; Bera, Kallol; Hoffman, Daniel J., Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution.

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2. Buchberger, Jr., Douglas A.; Brillhart, Paul Lukas; Fovell, Richard; Tavassoli, Hamid; Burns, Douglas H.; Bera, Kallol; Hoffman, Daniel J., Capacitively coupled plasma reactor having very agile wafer temperature control.

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3. Buchberger, Jr., Douglas A.; Brillhart, Paul Lukas; Fovell, Richard; Tavassoli, Hamid; Burns, Douglas H.; Bera, Kallol; Hoffman, Daniel J.; Cowans, Kenneth W.; Cowans, William W.; Zubillaga, Glenn W.; Millan, Isaac, Capacitively coupled plasma reactor having very agile wafer temperature control.

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4. Luo Jih-Shiuan (Sam), Capacitor coupled chuck for carbon dioxide snow cleaning system.

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5. Mahadeswaraswamy, Chetan; Ramaswamy, Kartik; Liao, Bryan; Shoji, Sergio; Nguyen, Duy D.; Noorbakhsh, Hamid; Palagashvili, David, Component temperature control by coolant flow control and heater duty cycle control.

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6. Howald, Arthur M.; Holland, John P., Dechucking method and apparatus for workpieces in vacuum processors.

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7. Aihara,Yasufumi; Tsuruta,Hideyoshi; Kawasaki,Keiji, Electrostatic chuck.

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8. Cooke, Richard A., Electrostatic chuck.

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9. Lin, I-Kuan; Cooke, Richard A.; Rybczynski, Jakub, Electrostatic chuck with photo-patternable soft protrusion contact surface.

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10. Lin, I-Kuan; Cooke, Richard A.; Rybczynski, Jakub, Electrostatic chuck with photo-patternable soft protrusion contact surface.

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11. Cooke, Richard A.; Richard, Nate; Donnell, Steven; Vose, Mark; Liu, Yan, Electrostatic chuck with polymer protrusions.

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12. Tsuruta,Hideyoshi; Yamada,Naohito, Electrostatic chucks and electrostatically attracting structures.

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13. Mahadeswaraswamy, Chetan; Merry, Walter R.; Shoji, Sergio Fukuda; Zhang, Chunlei; Pattar, Yashaswini B.; Nguyen, Duy D.; Tsong, Tina; Nevil, Shane C.; Buchberger, Jr., Douglas A.; Silveira, Fernando M.; Mays, Brad L.; Ramaswamy, Kartik; Noorbakhsh, Hamid, Feedforward temperature control for plasma processing apparatus.

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14. Fischer,Andreas, Heat transfer system for improved semiconductor processing uniformity.

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15. Cooke, Richard A.; Stone, Dale K.; Stone, Lyudmila; Blake, Julian; Suuronen, David, High surface resistivity electrostatic chuck.

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16. Neerhof,Hendrik Antony Johannes, Lithographic apparatus and method to detect correct clamping of an object.

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17. Loo, David; Chen, Jr-Jyan; Ngan, Kenny K.; Stimson, Bradley O., Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck.

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18. Ishida, Shuya, Method and apparatus for chucking a substrate.

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19. Nishikawa, Hiroshi, Method and apparatus for processing workpiece.

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20. Nishikawa, Hiroshi, Method and apparatus for processing workpiece.

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21. McMillin, Brian; Tong, Jose V.; Wang, Yen-Kun Victor, Method and apparatus for reduction of voltage potential spike during dechucking.

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22. McChesney, Jon; Paterson, Alex; Todorow, Valentin N.; Holland, John; Barnes, Michael, Method and apparatus to monitor electrical states at a workpiece in a semiconductor processing chamber.

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23. Buchberger, Jr., Douglas A.; Brillhart, Paul Lukas; Fovell, Richard; Tavassoli, Hamid; Burns, Douglas H.; Bera, Kallol; Hoffman, Daniel J.; Cowans, Kenneth W.; Cowans, Williams W.; Zubillaga, Glenn W.; Millian, Isaac, Method for agile workpiece temperature control in a plasma reactor using a thermal model.

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24. McMillin, Brian; Tong, Jose V.; Wang, Yen-Kun Victor, Method for reduction of voltage potential spike during dechucking.

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25. Brillhart, Paul Lukas; Fovell, Richard; Buchberger, Jr., Douglas A.; Burns, Douglas H.; Bera, Kallol; Hoffman, Daniel J., Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor.

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26. Brillhart, Paul Lukas; Fovell, Richard; Buchberger, Jr., Douglas A.; Burns, Douglas H.; Bera, Kallol; Hoffman, Daniel J.; Cowans, Kenneth W.; Cowans, William W.; Zubillaga, Glenn W.; Millan, Isaac, Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor.

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27. Howald,Arthur M., Method of determining the correct average bias compensation voltage during a plasma process.

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28. Brillhart, Paul Lukas; Fovell, Richard; Buchberger, Jr., Douglas A.; Burns, Douglas H.; Bera, Kallol; Hoffman, Daniel J.; Cowans, Kenneth W.; Cowans, William W.; Zubillaga, Glenn W.; Millan, Isaac, Method of operating a capacitively coupled plasma reactor with dual temperature control loops.

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29. Buchberger, Jr., Douglas A.; Brillhart, Paul Lukas; Fovell, Richard; Burns, Douglas H.; Bera, Kallol; Hoffman, Daniel J.; Cowans, Kenneth W.; Cowans, William W.; Zubillaga, Glenn W.; Millan, Isaac, Method of processing a workpiece in a plasma reactor using feed forward thermal control.

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30. Brillhart, Paul Lukas; Fovell, Richard; Buchberger, Jr., Douglas A.; Burns, Douglas H.; Bera, Kallol; Hoffman, Daniel J.; Cowans, Kenneth W.; Cowans, William W.; Zubillaga, Glenn W.; Millan, Isaac, Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control.

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31. Povolny, Henry S., Methods of dechucking and system thereof.

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32. Endoh, Shosuke; Iwabuchi, Noriyuki; Kato, Shigeaki; Okubo, Tomoya; Hirose, Jun; Nagakura, Koichi; Koshimizu, Chishio; Denpoh, Kazuki, Plasma processing apparatus, focus ring, and susceptor.

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33. Kikuchi, Akihiro; Kayamori, Satoshi; Shima, Shinya; Sakamoto, Yuichiro; Higuchi, Kimihiro; Oohashi, Kaoru; Ueda, Takehiro; Shibuya, Munehiro; Gondai, Tadashi, Plasma processor and plasma processing method.

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34. Kikuchi, Akihiro; Kayamori, Satoshi; Shima, Shinya; Sakamoto, Yuichiro; Higuchi, Kimihiro; Oohashi, Kaoru; Ueda, Takehiro; Shibuya, Munehiro; Gondai, Tadashi, Plasma processor and plasma processing method.

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35. Kikuchi, Akihiro; Kayamori, Satoshi; Shima, Shinya; Sakamoto, Yuichiro; Higuchi, Kimihiro; Oohashi, Kaoru; Ueda, Takehiro; Shibuya, Munehiro; Gondai, Tadashi, Plasma processor and plasma processing method.

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36. Brillhart, Paul Lukas; Fovell, Richard; Tavassoli, Hamid; Buchberger, Jr., Douglas A.; Burns, Douglas H.; Bera, Kallol; Hoffman, Daniel J., Plasma reactor with a multiple zone thermal control feed forward control apparatus.

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37. Brillhart, Paul Lukas; Fovell, Richard; Tavassoli, Hamid; Buchberger, Jr., Douglas A.; Burns, Douglas H.; Bera, Kallol; Hoffman, Daniel J.; Cowans, Kenneth W.; Cowans, William W.; Zubillaga, Glenn W.; Millan, Isaac, Plasma reactor with a multiple zone thermal control feed forward control apparatus.

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38. Buchberger, Jr., Douglas A.; Brillhart, Paul Lukas; Fovell, Richard; Tavassoli, Hamid; Burns, Douglas H.; Bera, Kallol; Hoffman, Daniel J., Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes.

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39. Buchberger, Jr., Douglas A.; Brillhart, Paul Lukas; Fovell, Richard; Tavassoli, Hamid; Burns, Douglas H.; Bera, Kallol; Hoffman, Daniel J.; Cowans, Kenneth W.; Cowans, William W.; Zubillaga, Glenn W.; Millan, Isaac, Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes.

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40. Buchberger, Jr., Douglas A.; Brillhart, Paul Lukas; Fovell, Richard; Tavassoli, Hamid; Burns, Douglas H.; Bera, Kallol; Hoffman, Daniel J.; Cowans, Kenneth W.; Cowans, William W.; Zubillaga, Glenn W.; Millan, Isaac, Plasma reactor with wafer backside thermal loop, two-phase internal pedestal thermal loop and a control processor governing both loops.

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41. Allen,Donald G.; Contreras,Richard Jule; Feldbaum,Michael; Truchetta,Dominic Frank, Prevention of electrostatic wafer sticking in plasma deposition/etch tools.

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42. Moriya, Tsuyoshi; Nakayama, Hiroyuki, Substrate cleaning apparatus and method.

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43. Howald, Arthur M., System and method for dechucking a workpiece from an electrostatic chuck.

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44. Berman, Michael J.; Barber, Rennie G., System and method for optimizing the electrostatic removal of a workpiece from a chuck.

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45. Silveira, Fernando M.; Tavassoli, Hamid; Zhou, Xiaoping; Nevil, Shane C.; Buchberger, Douglas A.; Mays, Brad L.; Tsong, Tina; Mahadeswaraswamy, Chetan; Pattar, Yashaswini B.; Nguyen, Duy D.; Merry, Walter R., Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow.

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46. Silveira, Fernando M.; Tavassoli, Hamid; Zhou, Xiaoping; Nevil, Shane C.; Buchberger, Douglas A.; Mays, Brad L.; Tsong, Tina; Mahadeswaraswamy, Chetan; Pattar, Yashaswini B.; Nguyen, Duy D.; Merry, Walter R., Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow.

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47. Belostotskiy, Sergey G.; Chafin, Michael G.; Liu, Jingbao; Palagashvili, David, Temperature enhanced electrostatic chucking in plasma processing apparatus.

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48. Shannon, Steven C.; Chafin, Michael G.; Grimard, Dennis S., Time-based wafer de-chucking from an electrostatic chuck having separate RF BIAS and DC chucking electrodes.

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