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Solid-state electronics, v.38 no.9, 1995년, pp.1575 - 1579
Nguyen, Loi D (Hughes Research Laboratories, 3011 Malibu Canyon Drive, Malibu, CA 90265, USA) , Le, Minh V (Hughes Research Laboratories, 3011 Malibu Canyon Drive, Malibu, CA 90265, USA) , Liu, Takyiu (Hughes Research Laboratories, 3011 Malibu Canyon Drive, Malibu, CA 90265, USA) , Lui, Mark (Hughes Research Laboratories, 3011 Malibu Canyon Drive, Malibu, CA 90265, USA) , Kaneko, Karen (Hughes Missile Systems, Canoga Park, Calif., USA) , Holzman, Eric (Hughes Missile Systems, Canoga Park, Calif., USA) , Delaney, Michael J (Hughes Space and Communications, El Segundo, Calif, USA)
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AbstractThis paper describes the performance, reliability, and applications of a new millimeterwave technology: the indium phosphide high electron mobility transistor (InP HEMT). This advanced technology is potentially an enabling technology for a wide range of millimeterwave systems....
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