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NTIS 바로가기電子工學會論文誌. Journal of the Institute of Electronics Engineers of Korea. SD, 반도체, v.47 no.3=no.393, 2010년, pp.7 - 17
정연배 (경북대학교 전자전기컴퓨터학부) , 김정현 (경북대학교 전자전기컴퓨터학부)
In this paper, an innovative low-power SRAM based on 4-transistor latch cell is described. The memory cells are composed of two cross-coupled inverters without access transistors. The sources of PMOS transistors are connected to bitlines while the sources of NMOS transistors are connected to wordlin...
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