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NTIS 바로가기Journal of semiconductor technology and science, v.11 no.3, 2011년, pp.182 - 189
Cho, Seong-Jae (Department of Electrical Engineering and Center for Integrated Systems (CIS), Stanford University) , Sun, Min-Chul (Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University) , Kim, Ga-Ram (Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University) , Kamins, Theodore I. (Department of Electrical Engineering and Center for Integrated Systems (CIS), Stanford University) , Park, Byung-Gook (Department of Electrical Engineering and Center for Integrated Systems (CIS), Stanford University) , Harris, James S. Jr. (Department of Electrical Engineering and Center for Integrated Systems (CIS), Stanford University)
In this work, a tunneling field-effect transistor (TFET) based on heterojunctions of compound and Group IV semiconductors is introduced and simulated. TFETs based on either silicon or compound semiconductors have been intensively researched due to their merits of robustness against short channel eff...
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