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Quantum Modeling of Nanoscale Symmetric Double-Gate InAlAs/InGaAs/InP HEMT 원문보기

Journal of semiconductor technology and science, v.13 no.4, 2013년, pp.342 - 354  

Verma, Neha (Microelectronics Research Laboratory, Department of Electronic Science, A.R.S.D College, University of Delhi, South Campus) ,  Gupta, Mridula (Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus) ,  Gupta, R.S. (Department of Electronics and Communication Engineering, Maharaja Agrasen Institute of Technology) ,  Jogi, Jyotika (Microelectronics Research Laboratory, Department of Electronic Science, A.R.S.D College, University of Delhi, South Campus)

Abstract ▼ AI-Helper 아이콘AI-Helper

The aim of this work is to investigate and study the quantum effects in the modeling of nanoscale symmetric double-gate InAlAs/InGaAs/InP HEMT (High Electron Mobility Transistor). In order to do so, the carrier concentration in InGaAs channel at gate lengths ($L_g$) 100 nm and 50 nm, are ...

주제어

#Double-gate HEMT (DGHEMT)   #double triangular quantum well   #modeling   #quantum effects   #simulation   #symmetric  

AI 본문요약
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제안 방법

  • The two 2-DEG layers formed in the channel between the two heterostructures cease to be independent and start behaving like a combined system. The authors in this work attempted to explore the effects due to quantum mechanical confinement in a channel formed by a double heterostructure device. The proposed quantum model treats the channel as a double triangular quantum well.
  • The model used in this paper is quantum moments model or density gradient model. This model incorporates device characteristics like drain characteristics (ID-VDS ), transfer-characteristics (ID-VGS ), transconductance (gm), output conductance (gd ), gate-source capacitance (CGS ), gate-drain capacitance (CGD) and cut-off frequency (fT) of InAlAs/InGaAs/InP DGHEMT. The results so obtained are compared with a semi-classical model (i.
  • To trace how the dominant trends of quantum effects are impacting DGHEMT, new challenges are directed on the device simulator to identify the limiting and critical parameters for improved performance. This paper deals with the quantum effects in InAlAs/InGaAs/ InP double gate HEMT (DGHEMT) where the layers with confined electrons are so thin that the laws of quantum physics start manifesting themselves. The two 2-DEG layers formed in the channel between the two heterostructures cease to be independent and start behaving like a combined system.

이론/모형

  • The proposed quantum model treats the channel as a double triangular quantum well. The model used in this paper is quantum moments model or density gradient model. This model incorporates device characteristics like drain characteristics (ID-VDS ), transfer-characteristics (ID-VGS ), transconductance (gm), output conductance (gd ), gate-source capacitance (CGS ), gate-drain capacitance (CGD) and cut-off frequency (fT) of InAlAs/InGaAs/InP DGHEMT.
  • Classically the moments of the Boltzmann equation are taken with respect to momentum which attains a simpler form of equations, but it becomes impractically complex for the quantum mechanical applications. Therefore in order to reach at much simpler equations for the quantum part which should be comparable to the classical simplicity, the method of moments is applied to the Wigner equation. This leads to equations that contain additional quantum correction terms.
  • On the other hand, drift-diffusion equations are advantageous as they are the most general and commonly used set of equations in hetero-junction device simulation codes. Thus, the authors have used quantum moments model which is also known as quantum drift-diffusion method (density-gradient model) and compared it with a semi-classical drift-diffusion model. This has helped in observing the change from drift-diffusion modeling to quantum drift-diffusion modeling (where the quantum confinement is included).
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